Conventional Semiconductors: The top down approach
•Single crystal substrates (e.g., Si, GaAs)
•Expensive processing facilities (Billion dollar fabrication plants)
•Generally invokes a series of process steps in which a substrate is coated with a photoresist, masked off, developed, etched, vapor doped, and so on ad infinitum.
•There are a very limited number of device architectures which have been highly optimized
•Despite the complexity silicon based devices are good and aren’t going away anytime soon. 
•Conventional devices configurations are applicable to p-conjugated polymers
a)Top-contact device, with source and drain electrodes evaporated onto organic layer.
b)Bottom-contact device with organic deposited onto source and drain.
A FET (field effect transistor)