When charge is moving the key word is mobility, mobility,
mobility (cm2 V–1 s -1)
From C.D. Dimitrakopoulos and D.J. Mascaro, IBM J. Res.
& Dev. (2001)
Device characteristics for a DH6T OTFT having an aluminum gate electrode, a 3700 Å vapor-deposited parylene-C gate insulating layer, and gold source and drain electrodes with L=137 mm and W=1.5 mm:(a) and (b). Drain current ID versus drain voltage VD for a range of gate voltage values VG plotted (a) linearly and (b) semi-logarithmically; (c) ID versus VG at VD= -2 V. Fitting this data yielded a linear regime mobility of 0.122 cm2 V-1s-1.
Current
mobilities are good enough for many device applications but critical technology related issues
still remain.
Device
costs are potentially very,very low ($0.05).
1986-2000