Conventional Semiconductors: The top down approach
					A FET (field effect transistor)
	• Single crystal substrates (e.g., Si, GaAs) • Expensive processing facilities (Billion dollar fabrication plants) • Generally invokes a series of process steps in which a substrate is coated with a photoresist, masked off, developed, etched, vapor doped, and so on ad infinitum. • There are a very limited number of device architectures which have been highly optimized • Despite the complexity silicon based devices are good and aren’t going away anytime soon. • Conventional devices configurations are applicable to p-conjugated polymers
				a) Top-contact device, with source and drain electrodes evaporated onto organic layer. b) Bottom-contact device with organic deposited onto source and drain.